SI4425FDY-T1-GE3

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Part Number	SI4425FDY-T1-GE3
Manufacturer	Vishay Siliconix
Category	Discrete Semiconductor › Transistors - FETs, MOSFETs - Single
Description	MOSFET P-CH 30V 12.7/18.3A 8SOIC
Lifecycle	Active
RoHS	No RoHS Information
EDA/CAD Models	SI4425FDY-T1-GE3 PCB Footprint and Symbol
Warehouses	USA, Europe, China, Hong Kong SAR
Estimated Delivery	Nov 14 - Nov 18 2024(Choose Expedited Shipping)
Warranty	Up to 1 year [Limited-Warranty]*
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SI4425FDY-T1-GE3 Specifications

Part Number:	SI4425FDY-T1-GE3
Brand:	Vishay Siliconix
Lifecycle:	Active
RoHS:	Lead free / RoHS Compliant
Category:	Discrete Semiconductor
Subcategory:	Transistors - FETs, MOSFETs - Single
Manufacturer:	Vishay Siliconix
Product Status:	Active
FET Type:	P-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	30 V
Current - Continuous Drain (Id) @ 25°C:	12.7A (Ta), 18.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Rds On (Max) @ Id, Vgs:	9.5mOhm @ 10A, 10V
Vgs(th) (Max) @ Id:	2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	41 nC @ 10 V
Vgs (Max):	+16V, -20V
Input Capacitance (Ciss) (Max) @ Vds:	1620 pF @ 15 V
FET Feature:	-
Power Dissipation (Max):	2.3W (Ta), 4.8W (Tc)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	8-SOIC
Package / Case:	8-SOIC (0.154", 3.90mm Width)

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