SI2315BDS-T1-BE3

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Part Number	SI2315BDS-T1-BE3
Manufacturer	Vishay Siliconix
Category	Discrete Semiconductor › Transistors - FETs, MOSFETs - Single
Description	P-CHANNEL 1.8-V (G-S) MOSFET
Lifecycle	Active
RoHS	No RoHS Information
EDA/CAD Models	SI2315BDS-T1-BE3 PCB Footprint and Symbol
Warehouses	USA, Europe, China, Hong Kong SAR
Estimated Delivery	Oct 23 - Oct 27 2024(Choose Expedited Shipping)
Warranty	Up to 1 year [Limited-Warranty]*
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SI2315BDS-T1-BE3 Specifications

Part Number:	SI2315BDS-T1-BE3
Brand:	Vishay Siliconix
Lifecycle:	Active
RoHS:	Lead free / RoHS Compliant
Category:	Discrete Semiconductor
Subcategory:	Transistors - FETs, MOSFETs - Single
Manufacturer:	Vishay Siliconix
Product Status:	Active
FET Type:	P-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	12 V
Current - Continuous Drain (Id) @ 25°C:	3A (Ta)
Drive Voltage (Max Rds On, Min Rds On):	1.8V, 4.5V
Rds On (Max) @ Id, Vgs:	50mOhm @ 3.85A, 4.5V
Vgs(th) (Max) @ Id:	900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	15 nC @ 4.5 V
Vgs (Max):	±8V
Input Capacitance (Ciss) (Max) @ Vds:	715 pF @ 6 V
FET Feature:	-
Power Dissipation (Max):	750mW (Ta)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	SOT-23-3 (TO-236)
Package / Case:	TO-236-3, SC-59, SOT-23-3

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