SI1912EDH-T1-E3

SI1912EDH-T1-E3
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Part Number SI1912EDH-T1-E3
Manufacturer Vishay Siliconix
Category Discrete SemiconductorTransistors - FETs, MOSFETs - Arrays
Description MOSFET 2N-CH 20V 1.13A SC70-6
Lifecycle Active
RoHS No RoHS Information
EDA/CAD Models SI1912EDH-T1-E3 PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Nov 14 - Nov 18 2024(Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*
Payment Wire Transfer, UnionPay, PayPal, Credit Card, Visa, MasterCard, AmericanExpress, Discover, WesternUnion, MoneyGram
Shipping DHL, UPS, FedEx, TNT, EMS, & More Express Delivery

SI1912EDH-T1-E3 Specifications

Part Number:SI1912EDH-T1-E3
Brand:Vishay Siliconix
Lifecycle:Active
RoHS:Lead free / RoHS Compliant
Category:Discrete Semiconductor
Subcategory:Transistors - FETs, MOSFETs - Arrays
Manufacturer:Vishay Siliconix
Product Status:Obsolete
FET Type:2 N-Channel (Dual)
FET Feature:Logic Level Gate
Drain to Source Voltage (Vdss):20V
Current - Continuous Drain (Id) @ 25°C:1.13A
Rds On (Max) @ Id, Vgs:280mOhm @ 1.13A, 4.5V
Vgs(th) (Max) @ Id:450mV @ 100µA (Min)
Gate Charge (Qg) (Max) @ Vgs:1nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds:-
Power - Max:570mW
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:6-TSSOP, SC-88, SOT-363
Supplier Device Package:SC-70-6

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In Stock 97395 pieces - More on Order
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Pricing (USD)

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