IRLD120PBF

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Part Number	IRLD120PBF
Manufacturer	Vishay Siliconix
Category	Discrete Semiconductor › Transistors - FETs, MOSFETs - Single
Description	MOSFET N-CH 100V 1.3A 4DIP
Lifecycle	Active
RoHS	No RoHS Information
EDA/CAD Models	IRLD120PBF PCB Footprint and Symbol
Warehouses	USA, Europe, China, Hong Kong SAR
Estimated Delivery	Sep 21 - Sep 25 2024(Choose Expedited Shipping)
Warranty	Up to 1 year [Limited-Warranty]*
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IRLD120PBF Specifications

Part Number:	IRLD120PBF
Brand:	Vishay Siliconix
Lifecycle:	Active
RoHS:	Lead free / RoHS Compliant
Category:	Discrete Semiconductor
Subcategory:	Transistors - FETs, MOSFETs - Single
Manufacturer:	Vishay Siliconix
Product Status:	Active
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	100 V
Current - Continuous Drain (Id) @ 25°C:	1.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On):	4V, 5V
Rds On (Max) @ Id, Vgs:	270mOhm @ 780mA, 5V
Vgs(th) (Max) @ Id:	2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	12 nC @ 5 V
Vgs (Max):	±10V
Input Capacitance (Ciss) (Max) @ Vds:	490 pF @ 25 V
FET Feature:	-
Power Dissipation (Max):	1.3W (Ta)
Operating Temperature:	-55°C ~ 175°C (TJ)
Mounting Type:	Through Hole
Supplier Device Package:	4-HVMDIP
Package / Case:	4-DIP (0.300", 7.62mm)

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