IRFD224PBF

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Part Number	IRFD224PBF
Manufacturer	Vishay Siliconix
Category	Discrete Semiconductor › Transistors - FETs, MOSFETs - Single
Description	MOSFET N-CH 250V 630MA 4DIP
Lifecycle	Active
RoHS	No RoHS Information
EDA/CAD Models	IRFD224PBF PCB Footprint and Symbol
Warehouses	USA, Europe, China, Hong Kong SAR
Estimated Delivery	Dec 23 - Dec 27 2024(Choose Expedited Shipping)
Warranty	Up to 1 year [Limited-Warranty]*
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Shipping

IRFD224PBF Specifications

Part Number:	IRFD224PBF
Brand:	Vishay Siliconix
Lifecycle:	Active
RoHS:	Lead free / RoHS Compliant
Category:	Discrete Semiconductor
Subcategory:	Transistors - FETs, MOSFETs - Single
Manufacturer:	Vishay Siliconix
Product Status:	Active
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	250 V
Current - Continuous Drain (Id) @ 25°C:	630mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):	10V
Rds On (Max) @ Id, Vgs:	1.1Ohm @ 380mA, 10V
Vgs(th) (Max) @ Id:	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	14 nC @ 10 V
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	260 pF @ 25 V
FET Feature:	-
Power Dissipation (Max):	1W (Ta)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Through Hole
Supplier Device Package:	4-HVMDIP
Package / Case:	4-DIP (0.300", 7.62mm)

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