VS-GB200TH120N

VS-GB200TH120N
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Part Number VS-GB200TH120N
Manufacturer Vishay General Semiconductor - Diodes Division
Category Discrete SemiconductorTransistors - IGBTs - Modules
Description IGBT MOD 1200V 360A INT-A-PAK
Lifecycle Active
RoHS No RoHS Information
EDA/CAD Models VS-GB200TH120N PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Nov 19 - Nov 23 2024(Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*
Payment Wire Transfer, UnionPay, PayPal, Credit Card, Visa, MasterCard, AmericanExpress, Discover, WesternUnion, MoneyGram
Shipping DHL, UPS, FedEx, TNT, EMS, & More Express Delivery

VS-GB200TH120N Specifications

Part Number:VS-GB200TH120N
Brand:Vishay General Semiconductor - Diodes Division
Lifecycle:Active
RoHS:Lead free / RoHS Compliant
Category:Discrete Semiconductor
Subcategory:Transistors - IGBTs - Modules
Manufacturer:Vishay General Semiconductor - Diodes Division
Product Status:Obsolete
IGBT Type:-
Configuration:Half Bridge
Voltage - Collector Emitter Breakdown (Max):1200 V
Current - Collector (Ic) (Max):360 A
Power - Max:1136 W
Vce(on) (Max) @ Vge, Ic:2.35V @ 15V, 200A
Current - Collector Cutoff (Max):5 mA
Input Capacitance (Cies) @ Vce:14.9 nF @ 25 V
Input:Standard
NTC Thermistor:No
Operating Temperature:150°C (TJ)
Mounting Type:Chassis Mount
Package / Case:Double INT-A-PAK (3 + 4)
Supplier Device Package:Double INT-A-PAK

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In Stock 55505 pieces - More on Order
Quote Limit No Limit
Lead-Time To be Confirmed
Minimum 1

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Pricing (USD)

Qty. Unit Price Ext. Price
12$434.51000$5214.12

Due to the impact of the COVID-19,the above prices have not been updated, please resend the inquiry to us, thank you for your understanding

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