For Reference Only
Part Number | 1N6483HE3/97 |
Manufacturer | Vishay General Semiconductor - Diodes Division |
Category | Discrete Semiconductor › Diodes - Rectifiers - Single |
Description | DIODE GEN PURP 800V 1A DO213AB |
Lifecycle | Active |
RoHS | No RoHS Information |
EDA/CAD Models | 1N6483HE3/97 PCB Footprint and Symbol |
Warehouses | USA, Europe, China, Hong Kong SAR |
Estimated Delivery | Dec 23 - Dec 27 2024(Choose Expedited Shipping) |
Warranty | Up to 1 year [Limited-Warranty]* |
Payment | |
Shipping |
Part Number: | 1N6483HE3/97 |
Brand: | Vishay General Semiconductor - Diodes Division |
Lifecycle: | Active |
RoHS: | Lead free / RoHS Compliant |
Category: | Discrete Semiconductor |
Subcategory: | Diodes - Rectifiers - Single |
Manufacturer: | Vishay General Semiconductor - Diodes Division |
Product Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 800 V |
Current - Average Rectified (Io): | 1A |
Voltage - Forward (Vf) (Max) @ If: | 1.1 V @ 1 A |
Speed: | Standard Recovery >500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | - |
Current - Reverse Leakage @ Vr: | 10 µA @ 800 V |
Capacitance @ Vr, F: | 8pF @ 4V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | DO-213AB, MELF (Glass) |
Supplier Device Package: | DO-213AB |
Operating Temperature - Junction: | -65°C ~ 175°C |
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In Stock | 78404 pieces - More on Order |
---|---|
Quote Limit | No Limit |
Lead-Time | To be Confirmed |
Minimum | 1 |
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Qty. | Unit Price | Ext. Price |
---|---|---|
10000 | $0.13272 | $1327.2 |
Due to the impact of the COVID-19,the above prices have not been updated, please resend the inquiry to us, thank you for your understanding
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