TPH3208LDG

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Part Number	TPH3208LDG
Manufacturer	Transphorm
Category	Discrete Semiconductor › Transistors - FETs, MOSFETs - Single
Description	GANFET N-CH 650V 20A 3PQFN
Lifecycle	Active
RoHS	No RoHS Information
EDA/CAD Models	TPH3208LDG PCB Footprint and Symbol
Warehouses	USA, Europe, China, Hong Kong SAR
Estimated Delivery	Dec 31 - Jan 04 2024(Choose Expedited Shipping)
Warranty	Up to 1 year [Limited-Warranty]*
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Shipping

TPH3208LDG Specifications

Part Number:	TPH3208LDG
Brand:	Transphorm
Lifecycle:	Active
RoHS:	Lead free / RoHS Compliant
Category:	Discrete Semiconductor
Subcategory:	Transistors - FETs, MOSFETs - Single
Manufacturer:	Transphorm
Product Status:	Obsolete
FET Type:	N-Channel
Technology:	GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss):	650 V
Current - Continuous Drain (Id) @ 25°C:	20A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	10V
Rds On (Max) @ Id, Vgs:	130mOhm @ 13A, 8V
Vgs(th) (Max) @ Id:	2.6V @ 300µA
Gate Charge (Qg) (Max) @ Vgs:	14 nC @ 8 V
Vgs (Max):	±18V
Input Capacitance (Ciss) (Max) @ Vds:	760 pF @ 400 V
FET Feature:	-
Power Dissipation (Max):	96W (Tc)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	3-PQFN (8x8)
Package / Case:	3-PowerDFN

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