TPH3206PD

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Part Number	TPH3206PD
Manufacturer	Transphorm
Category	Discrete Semiconductor › Transistors - FETs, MOSFETs - Single
Description	GANFET N-CH 600V 17A TO220AB
Lifecycle	Active
RoHS	No RoHS Information
EDA/CAD Models	TPH3206PD PCB Footprint and Symbol
Warehouses	USA, Europe, China, Hong Kong SAR
Estimated Delivery	Dec 10 - Dec 14 2025(Choose Expedited Shipping)
Warranty	Up to 1 year [Limited-Warranty]*
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TPH3206PD Specifications

Part Number:	TPH3206PD
Brand:	Transphorm
Lifecycle:	Active
RoHS:	Lead free / RoHS Compliant
Category:	Discrete Semiconductor
Subcategory:	Transistors - FETs, MOSFETs - Single
Manufacturer:	Transphorm
Product Status:	Not For New Designs
FET Type:	N-Channel
Technology:	GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss):	600 V
Current - Continuous Drain (Id) @ 25°C:	17A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	10V
Rds On (Max) @ Id, Vgs:	180mOhm @ 11A, 8V
Vgs(th) (Max) @ Id:	2.6V @ 500µA
Gate Charge (Qg) (Max) @ Vgs:	9.3 nC @ 4.5 V
Vgs (Max):	±18V
Input Capacitance (Ciss) (Max) @ Vds:	760 pF @ 480 V
FET Feature:	-
Power Dissipation (Max):	96W (Tc)
Operating Temperature:	-55°C ~ 175°C (TJ)
Mounting Type:	Through Hole
Supplier Device Package:	TO-220AB
Package / Case:	TO-220-3

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