TPH3206LSGB

TPH3206LSGB
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Part Number TPH3206LSGB
Manufacturer Transphorm
Category Discrete SemiconductorTransistors - FETs, MOSFETs - Single
Description GANFET N-CH 650V 16A 3PQFN
Lifecycle Active
RoHS No RoHS Information
EDA/CAD Models TPH3206LSGB PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Nov 16 - Nov 20 2024(Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*
Payment Wire Transfer, UnionPay, PayPal, Credit Card, Visa, MasterCard, AmericanExpress, Discover, WesternUnion, MoneyGram
Shipping DHL, UPS, FedEx, TNT, EMS, & More Express Delivery

TPH3206LSGB Specifications

Part Number:TPH3206LSGB
Brand:Transphorm
Lifecycle:Active
RoHS:Lead free / RoHS Compliant
Category:Discrete Semiconductor
Subcategory:Transistors - FETs, MOSFETs - Single
Manufacturer:Transphorm
Product Status:Obsolete
FET Type:N-Channel
Technology:GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:16A (Tc)
Drive Voltage (Max Rds On, Min Rds On):8V
Rds On (Max) @ Id, Vgs:180mOhm @ 10A, 8V
Vgs(th) (Max) @ Id:2.6V @ 500µA
Gate Charge (Qg) (Max) @ Vgs:6.2 nC @ 4.5 V
Vgs (Max):±18V
Input Capacitance (Ciss) (Max) @ Vds:720 pF @ 480 V
FET Feature:-
Power Dissipation (Max):81W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:3-PQFN (8x8)
Package / Case:3-PowerDFN

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In Stock 60925 pieces - More on Order
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Pricing (USD)

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