TPH3205WSBQA

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Part Number	TPH3205WSBQA
Manufacturer	Transphorm
Category	Discrete Semiconductor › Transistors - FETs, MOSFETs - Single
Description	GANFET N-CH 650V 35A TO247-3
Lifecycle	Active
RoHS	No RoHS Information
EDA/CAD Models	TPH3205WSBQA PCB Footprint and Symbol
Warehouses	USA, Europe, China, Hong Kong SAR
Estimated Delivery	Nov 28 - Dec 02 2024(Choose Expedited Shipping)
Warranty	Up to 1 year [Limited-Warranty]*
Payment
Shipping

TPH3205WSBQA Specifications

Part Number:	TPH3205WSBQA
Brand:	Transphorm
Lifecycle:	Active
RoHS:	Lead free / RoHS Compliant
Category:	Discrete Semiconductor
Subcategory:	Transistors - FETs, MOSFETs - Single
Manufacturer:	Transphorm
Product Status:	Not For New Designs
FET Type:	N-Channel
Technology:	GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss):	650 V
Current - Continuous Drain (Id) @ 25°C:	35A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	10V
Rds On (Max) @ Id, Vgs:	62mOhm @ 22A, 8V
Vgs(th) (Max) @ Id:	2.6V @ 700µA
Gate Charge (Qg) (Max) @ Vgs:	42 nC @ 8 V
Vgs (Max):	±18V
Input Capacitance (Ciss) (Max) @ Vds:	2200 pF @ 400 V
FET Feature:	-
Power Dissipation (Max):	125W (Tc)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Through Hole
Supplier Device Package:	TO-247-3
Package / Case:	TO-247-3

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