For Reference Only
Part Number | TPD3215M |
Manufacturer | Transphorm |
Category | Discrete Semiconductor › Transistors - FETs, MOSFETs - Arrays |
Description | GANFET 2N-CH 600V 70A MODULE |
Lifecycle | Active |
RoHS | No RoHS Information |
EDA/CAD Models | TPD3215M PCB Footprint and Symbol |
Warehouses | USA, Europe, China, Hong Kong SAR |
Estimated Delivery | Nov 25 - Nov 29 2024(Choose Expedited Shipping) |
Warranty | Up to 1 year [Limited-Warranty]* |
Payment | |
Shipping |
Part Number: | TPD3215M |
Brand: | Transphorm |
Lifecycle: | Active |
RoHS: | Lead free / RoHS Compliant |
Category: | Discrete Semiconductor |
Subcategory: | Transistors - FETs, MOSFETs - Arrays |
Manufacturer: | Transphorm |
Product Status: | Obsolete |
FET Type: | 2 N-Channel (Half Bridge) |
FET Feature: | GaNFET (Gallium Nitride) |
Drain to Source Voltage (Vdss): | 600V |
Current - Continuous Drain (Id) @ 25°C: | 70A (Tc) |
Rds On (Max) @ Id, Vgs: | 34mOhm @ 30A, 8V |
Vgs(th) (Max) @ Id: | - |
Gate Charge (Qg) (Max) @ Vgs: | 28nC @ 8V |
Input Capacitance (Ciss) (Max) @ Vds: | 2260pF @ 100V |
Power - Max: | 470W |
Operating Temperature: | -40°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | Module |
Supplier Device Package: | Module |
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In Stock | 477 pieces - More on Order |
---|---|
Quote Limit | No Limit |
Lead-Time | To be Confirmed |
Minimum | 1 |
Warm Tips: Please fill out the form below. We will contact you as soon as possible.
Qty. | Unit Price | Ext. Price |
---|---|---|
1 | $178.83000 | $178.83 |
10 | $172.66200 | $1726.62 |
Due to the impact of the COVID-19,the above prices have not been updated, please resend the inquiry to us, thank you for your understanding
Please feel free to contact us for details.