TPD3215M

TPD3215M
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Part Number TPD3215M
Manufacturer Transphorm
Category Discrete SemiconductorTransistors - FETs, MOSFETs - Arrays
Description GANFET 2N-CH 600V 70A MODULE
Lifecycle Active
RoHS No RoHS Information
EDA/CAD Models TPD3215M PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Nov 25 - Nov 29 2024(Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*
Payment Wire Transfer, UnionPay, PayPal, Credit Card, Visa, MasterCard, AmericanExpress, Discover, WesternUnion, MoneyGram
Shipping DHL, UPS, FedEx, TNT, EMS, & More Express Delivery

TPD3215M Specifications

Part Number:TPD3215M
Brand:Transphorm
Lifecycle:Active
RoHS:Lead free / RoHS Compliant
Category:Discrete Semiconductor
Subcategory:Transistors - FETs, MOSFETs - Arrays
Manufacturer:Transphorm
Product Status:Obsolete
FET Type:2 N-Channel (Half Bridge)
FET Feature:GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss):600V
Current - Continuous Drain (Id) @ 25°C:70A (Tc)
Rds On (Max) @ Id, Vgs:34mOhm @ 30A, 8V
Vgs(th) (Max) @ Id:-
Gate Charge (Qg) (Max) @ Vgs:28nC @ 8V
Input Capacitance (Ciss) (Max) @ Vds:2260pF @ 100V
Power - Max:470W
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Through Hole
Package / Case:Module
Supplier Device Package:Module

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Quick Inquiry

In Stock 477 pieces - More on Order
Quote Limit No Limit
Lead-Time To be Confirmed
Minimum 1

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Pricing (USD)

Qty. Unit Price Ext. Price
1$178.83000$178.83
10$172.66200$1726.62

Due to the impact of the COVID-19,the above prices have not been updated, please resend the inquiry to us, thank you for your understanding

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