For Reference Only
Part Number | TW070J120B,S1Q |
Manufacturer | Toshiba Semiconductor and Storage |
Category | Discrete Semiconductor › Transistors - FETs, MOSFETs - Single |
Description | SICFET N-CH 1200V 36A TO3P |
Lifecycle | Active |
RoHS | No RoHS Information |
EDA/CAD Models | TW070J120B,S1Q PCB Footprint and Symbol |
Warehouses | USA, Europe, China, Hong Kong SAR |
Estimated Delivery | Oct 31 - Nov 04 2024(Choose Expedited Shipping) |
Warranty | Up to 1 year [Limited-Warranty]* |
Payment | |
Shipping |
Part Number: | TW070J120B,S1Q |
Brand: | Toshiba Semiconductor and Storage |
Lifecycle: | Active |
RoHS: | Lead free / RoHS Compliant |
Category: | Discrete Semiconductor |
Subcategory: | Transistors - FETs, MOSFETs - Single |
Manufacturer: | Toshiba Semiconductor and Storage |
Product Status: | Active |
FET Type: | N-Channel |
Technology: | SiCFET (Silicon Carbide) |
Drain to Source Voltage (Vdss): | 1200 V |
Current - Continuous Drain (Id) @ 25°C: | 36A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 20V |
Rds On (Max) @ Id, Vgs: | 90mOhm @ 18A, 20V |
Vgs(th) (Max) @ Id: | 5.8V @ 20mA |
Gate Charge (Qg) (Max) @ Vgs: | 67 nC @ 20 V |
Vgs (Max): | ±25V, -10V |
Input Capacitance (Ciss) (Max) @ Vds: | 1680 pF @ 800 V |
FET Feature: | Standard |
Power Dissipation (Max): | 272W (Tc) |
Operating Temperature: | -55°C ~ 175°C |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-3P(N) |
Package / Case: | TO-3P-3, SC-65-3 |
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In Stock | 2652 pieces - More on Order |
---|---|
Quote Limit | No Limit |
Lead-Time | To be Confirmed |
Minimum | 1 |
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Qty. | Unit Price | Ext. Price |
---|---|---|
1 | $33.97000 | $33.97 |
Due to the impact of the COVID-19,the above prices have not been updated, please resend the inquiry to us, thank you for your understanding
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