TW070J120B,S1Q

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Part Number	TW070J120B,S1Q
Manufacturer	Toshiba Semiconductor and Storage
Category	Discrete Semiconductor › Transistors - FETs, MOSFETs - Single
Description	SICFET N-CH 1200V 36A TO3P
Lifecycle	Active
RoHS	No RoHS Information
EDA/CAD Models	TW070J120B,S1Q PCB Footprint and Symbol
Warehouses	USA, Europe, China, Hong Kong SAR
Estimated Delivery	Dec 10 - Dec 14 2025(Choose Expedited Shipping)
Warranty	Up to 1 year [Limited-Warranty]*
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TW070J120B,S1Q Specifications

Part Number:	TW070J120B,S1Q
Brand:	Toshiba Semiconductor and Storage
Lifecycle:	Active
RoHS:	Lead free / RoHS Compliant
Category:	Discrete Semiconductor
Subcategory:	Transistors - FETs, MOSFETs - Single
Manufacturer:	Toshiba Semiconductor and Storage
Product Status:	Active
FET Type:	N-Channel
Technology:	SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss):	1200 V
Current - Continuous Drain (Id) @ 25°C:	36A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	20V
Rds On (Max) @ Id, Vgs:	90mOhm @ 18A, 20V
Vgs(th) (Max) @ Id:	5.8V @ 20mA
Gate Charge (Qg) (Max) @ Vgs:	67 nC @ 20 V
Vgs (Max):	±25V, -10V
Input Capacitance (Ciss) (Max) @ Vds:	1680 pF @ 800 V
FET Feature:	Standard
Power Dissipation (Max):	272W (Tc)
Operating Temperature:	-55°C ~ 175°C
Mounting Type:	Through Hole
Supplier Device Package:	TO-3P(N)
Package / Case:	TO-3P-3, SC-65-3

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