TW045N120C,S1F

TW045N120C,S1F
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Part Number TW045N120C,S1F
Manufacturer Toshiba Semiconductor and Storage
Category Discrete SemiconductorTransistors - FETs, MOSFETs - Single
Description G3 1200V SIC-MOSFET TO-247 45MO
Lifecycle Active
RoHS No RoHS Information
EDA/CAD Models TW045N120C,S1F PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Dec 01 - Dec 05 2024(Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*
Payment Wire Transfer, UnionPay, PayPal, Credit Card, Visa, MasterCard, AmericanExpress, Discover, WesternUnion, MoneyGram
Shipping DHL, UPS, FedEx, TNT, EMS, & More Express Delivery

TW045N120C,S1F Specifications

Part Number:TW045N120C,S1F
Brand:Toshiba Semiconductor and Storage
Lifecycle:Active
RoHS:Lead free / RoHS Compliant
Category:Discrete Semiconductor
Subcategory:Transistors - FETs, MOSFETs - Single
Manufacturer:Toshiba Semiconductor and Storage
Product Status:Active
FET Type:N-Channel
Technology:SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss):1200 V
Current - Continuous Drain (Id) @ 25°C:40A (Tc)
Drive Voltage (Max Rds On, Min Rds On):18V
Rds On (Max) @ Id, Vgs:59mOhm @ 20A, 18V
Vgs(th) (Max) @ Id:5V @ 6.7mA
Gate Charge (Qg) (Max) @ Vgs:57 nC @ 18 V
Vgs (Max):+25V, -10V
Input Capacitance (Ciss) (Max) @ Vds:1969 pF @ 800 V
FET Feature:-
Power Dissipation (Max):182W (Tc)
Operating Temperature:175°C
Mounting Type:Through Hole
Supplier Device Package:TO-247
Package / Case:TO-247-3

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Pricing (USD)

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1$24.84000$24.84

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