For Reference Only
Part Number | TPN4R806PL,L1Q |
Manufacturer | Toshiba Semiconductor and Storage |
Category | Discrete Semiconductor › Transistors - FETs, MOSFETs - Single |
Description | MOSFET N-CH 60V 72A 8TSON |
Lifecycle | Active |
RoHS | No RoHS Information |
EDA/CAD Models | TPN4R806PL,L1Q PCB Footprint and Symbol |
Warehouses | USA, Europe, China, Hong Kong SAR |
Estimated Delivery | Sep 09 - Sep 13 2024(Choose Expedited Shipping) |
Warranty | Up to 1 year [Limited-Warranty]* |
Payment | ![]() |
Shipping | ![]() |
Part Number: | TPN4R806PL,L1Q |
Brand: | Toshiba Semiconductor and Storage |
Lifecycle: | Active |
RoHS: | Lead free / RoHS Compliant |
Category: | Discrete Semiconductor |
Subcategory: | Transistors - FETs, MOSFETs - Single |
Manufacturer: | Toshiba Semiconductor and Storage |
Product Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 60 V |
Current - Continuous Drain (Id) @ 25°C: | 72A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 3.5mOhm @ 36A, 10V |
Vgs(th) (Max) @ Id: | 2.5V @ 300µA |
Gate Charge (Qg) (Max) @ Vgs: | 29 nC @ 10 V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 2770 pF @ 30 V |
FET Feature: | - |
Power Dissipation (Max): | 630mW (Ta), 104W (Tc) |
Operating Temperature: | 175°C |
Mounting Type: | Surface Mount |
Supplier Device Package: | 8-TSON Advance (3.1x3.1) |
Package / Case: | 8-PowerVDFN |
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In Stock | 41240 pieces - More on Order |
---|---|
Quote Limit | No Limit |
Lead-Time | To be Confirmed |
Minimum | 1 |
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Qty. | Unit Price | Ext. Price |
---|---|---|
1 | $0.97000 | $0.97 |
Due to the impact of the COVID-19,the above prices have not been updated, please resend the inquiry to us, thank you for your understanding
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