TPN4R712MD,L1Q

TPN4R712MD,L1Q
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Part Number TPN4R712MD,L1Q
Manufacturer Toshiba Semiconductor and Storage
Category Discrete SemiconductorTransistors - FETs, MOSFETs - Single
Description MOSFET P-CH 20V 36A 8TSON
Lifecycle Active
RoHS No RoHS Information
EDA/CAD Models TPN4R712MD,L1Q PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Sep 21 - Sep 25 2024(Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*
Payment Wire Transfer, UnionPay, PayPal, Credit Card, Visa, MasterCard, AmericanExpress, Discover, WesternUnion, MoneyGram
Shipping DHL, UPS, FedEx, TNT, EMS, & More Express Delivery

TPN4R712MD,L1Q Specifications

Part Number:TPN4R712MD,L1Q
Brand:Toshiba Semiconductor and Storage
Lifecycle:Active
RoHS:Lead free / RoHS Compliant
Category:Discrete Semiconductor
Subcategory:Transistors - FETs, MOSFETs - Single
Manufacturer:Toshiba Semiconductor and Storage
Product Status:Active
FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:36A (Tc)
Drive Voltage (Max Rds On, Min Rds On):2.5V, 4.5V
Rds On (Max) @ Id, Vgs:4.7mOhm @ 18A, 4.5V
Vgs(th) (Max) @ Id:1.2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:65 nC @ 5 V
Vgs (Max):±12V
Input Capacitance (Ciss) (Max) @ Vds:4300 pF @ 10 V
FET Feature:-
Power Dissipation (Max):42W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-TSON Advance (3.1x3.1)
Package / Case:8-PowerVDFN

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Pricing (USD)

Qty. Unit Price Ext. Price
5000$0.27300$1365

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