TPCC8105,L1Q(CM

TPCC8105,L1Q(CM
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Part Number TPCC8105,L1Q(CM
Manufacturer Toshiba Semiconductor and Storage
Category Discrete SemiconductorTransistors - FETs, MOSFETs - Single
Description MOSFET P-CH 30V 23A 8TSON
Lifecycle Active
RoHS No RoHS Information
EDA/CAD Models TPCC8105,L1Q(CM PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Dec 11 - Dec 15 2025(Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*
Payment Wire Transfer, UnionPay, PayPal, Credit Card, Visa, MasterCard, AmericanExpress, Discover, WesternUnion, MoneyGram
Shipping DHL, UPS, FedEx, TNT, EMS, & More Express Delivery

TPCC8105,L1Q(CM Specifications

Part Number:TPCC8105,L1Q(CM
Brand:Toshiba Semiconductor and Storage
Lifecycle:Active
RoHS:Lead free / RoHS Compliant
Category:Discrete Semiconductor
Subcategory:Transistors - FETs, MOSFETs - Single
Manufacturer:Toshiba Semiconductor and Storage
Product Status:Active
FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:23A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:7.8mOhm @ 11.5A, 10V
Vgs(th) (Max) @ Id:2V @ 500µA
Gate Charge (Qg) (Max) @ Vgs:76 nC @ 10 V
Vgs (Max):+20V, -25V
Input Capacitance (Ciss) (Max) @ Vds:3240 pF @ 10 V
FET Feature:-
Power Dissipation (Max):700mW (Ta), 30W (Tc)
Operating Temperature:150°C
Mounting Type:Surface Mount
Supplier Device Package:8-TSON Advance (3.3x3.3)
Package / Case:8-VDFN Exposed Pad

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