TPC8212-H(TE12LQ,M

TPC8212-H(TE12LQ,M
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Part Number TPC8212-H(TE12LQ,M
Manufacturer Toshiba Semiconductor and Storage
Category Discrete SemiconductorTransistors - FETs, MOSFETs - Arrays
Description MOSFET 2N-CH 30V 6A SOP8
Lifecycle Active
RoHS No RoHS Information
EDA/CAD Models TPC8212-H(TE12LQ,M PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Nov 08 - Nov 12 2024(Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*
Payment Wire Transfer, UnionPay, PayPal, Credit Card, Visa, MasterCard, AmericanExpress, Discover, WesternUnion, MoneyGram
Shipping DHL, UPS, FedEx, TNT, EMS, & More Express Delivery

TPC8212-H(TE12LQ,M Specifications

Part Number:TPC8212-H(TE12LQ,M
Brand:Toshiba Semiconductor and Storage
Lifecycle:Active
RoHS:Lead free / RoHS Compliant
Category:Discrete Semiconductor
Subcategory:Transistors - FETs, MOSFETs - Arrays
Manufacturer:Toshiba Semiconductor and Storage
Product Status:Obsolete
FET Type:2 N-Channel (Dual)
FET Feature:Logic Level Gate
Drain to Source Voltage (Vdss):30V
Current - Continuous Drain (Id) @ 25°C:6A
Rds On (Max) @ Id, Vgs:21mOhm @ 3A, 10V
Vgs(th) (Max) @ Id:2.3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:16nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:840pF @ 10V
Power - Max:450mW
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:8-SOIC (0.173", 4.40mm Width)
Supplier Device Package:8-SOP (5.5x6.0)

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Quick Inquiry

In Stock 69438 pieces - More on Order
Quote Limit No Limit
Lead-Time To be Confirmed
Minimum 1

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Pricing (USD)

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1$0.00000$0

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