For Reference Only
| Part Number | TK7E80W,S1X |
| Manufacturer | Toshiba Semiconductor and Storage |
| Category | Discrete Semiconductor › Transistors - FETs, MOSFETs - Single |
| Description | MOSFET N-CH 800V 6.5A TO220 |
| Lifecycle | Active |
| RoHS | No RoHS Information |
| EDA/CAD Models | TK7E80W,S1X PCB Footprint and Symbol |
| Warehouses | USA, Europe, China, Hong Kong SAR |
| Estimated Delivery | Dec 23 - Dec 27 2024(Choose Expedited Shipping) |
| Warranty | Up to 1 year [Limited-Warranty]* |
| Payment | 
|
| Shipping |  |
| Part Number: | TK7E80W,S1X |
| Brand: | Toshiba Semiconductor and Storage |
| Lifecycle: | Active |
| RoHS: | Lead free / RoHS Compliant |
| Category: | Discrete Semiconductor |
| Subcategory: | Transistors - FETs, MOSFETs - Single |
| Manufacturer: | Toshiba Semiconductor and Storage |
| Product Status: | Active |
| FET Type: | N-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 800 V |
| Current - Continuous Drain (Id) @ 25°C: | 6.5A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Rds On (Max) @ Id, Vgs: | 950mOhm @ 3.3A, 10V |
| Vgs(th) (Max) @ Id: | 4V @ 280µA |
| Gate Charge (Qg) (Max) @ Vgs: | 13 nC @ 10 V |
| Vgs (Max): | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds: | 700 pF @ 300 V |
| FET Feature: | - |
| Power Dissipation (Max): | 110W (Tc) |
| Operating Temperature: | 150°C |
| Mounting Type: | Through Hole |
| Supplier Device Package: | TO-220 |
| Package / Case: | TO-220-3 |
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| In Stock | 42196 pieces - More on Order |
|---|---|
| Quote Limit | No Limit |
| Lead-Time | To be Confirmed |
| Minimum | 1 |
Warm Tips: Please fill out the form below. We will contact you as soon as possible.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1 | $2.88000 | $2.88 |
| 50 | $2.32500 | $116.25 |
| 100 | $2.09250 | $209.25 |
| 500 | $1.62750 | $813.75 |
| 1000 | $1.34850 | $1348.5 |
| 2500 | $1.30200 | $3255 |
Due to the impact of the COVID-19,the above prices have not been updated, please resend the inquiry to us, thank you for your understanding
Please feel free to contact us for details.
