TK5R3E08QM,S1X

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Part Number	TK5R3E08QM,S1X
Manufacturer	Toshiba Semiconductor and Storage
Category	Discrete Semiconductor › Transistors - FETs, MOSFETs - Single
Description	UMOS10 TO-220AB 80V 5.3MOHM
Lifecycle	Active
RoHS	No RoHS Information
EDA/CAD Models	TK5R3E08QM,S1X PCB Footprint and Symbol
Warehouses	USA, Europe, China, Hong Kong SAR
Estimated Delivery	Sep 21 - Sep 25 2024(Choose Expedited Shipping)
Warranty	Up to 1 year [Limited-Warranty]*
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TK5R3E08QM,S1X Specifications

Part Number:	TK5R3E08QM,S1X
Brand:	Toshiba Semiconductor and Storage
Lifecycle:	Active
RoHS:	Lead free / RoHS Compliant
Category:	Discrete Semiconductor
Subcategory:	Transistors - FETs, MOSFETs - Single
Manufacturer:	Toshiba Semiconductor and Storage
Product Status:	Active
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	80 V
Current - Continuous Drain (Id) @ 25°C:	120A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	6V, 10V
Rds On (Max) @ Id, Vgs:	5.3mOhm @ 50A, 10V
Vgs(th) (Max) @ Id:	3.5V @ 700µA
Gate Charge (Qg) (Max) @ Vgs:	55 nC @ 10 V
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	3980 pF @ 40 V
FET Feature:	-
Power Dissipation (Max):	150W (Tc)
Operating Temperature:	175°C
Mounting Type:	Through Hole
Supplier Device Package:	TO-220
Package / Case:	TO-220-3

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