For Reference Only
Part Number | TK4R3E06PL,S1X |
Manufacturer | Toshiba Semiconductor and Storage |
Category | Discrete Semiconductor › Transistors - FETs, MOSFETs - Single |
Description | MOSFET N-CH 60V 80A TO220 |
Lifecycle | Active |
RoHS | No RoHS Information |
EDA/CAD Models | TK4R3E06PL,S1X PCB Footprint and Symbol |
Warehouses | USA, Europe, China, Hong Kong SAR |
Estimated Delivery | Dec 01 - Dec 05 2024(Choose Expedited Shipping) |
Warranty | Up to 1 year [Limited-Warranty]* |
Payment | |
Shipping |
Part Number: | TK4R3E06PL,S1X |
Brand: | Toshiba Semiconductor and Storage |
Lifecycle: | Active |
RoHS: | Lead free / RoHS Compliant |
Category: | Discrete Semiconductor |
Subcategory: | Transistors - FETs, MOSFETs - Single |
Manufacturer: | Toshiba Semiconductor and Storage |
Product Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 60 V |
Current - Continuous Drain (Id) @ 25°C: | 80A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 7.2mOhm @ 15A, 4.5V |
Vgs(th) (Max) @ Id: | 2.5V @ 500µA |
Gate Charge (Qg) (Max) @ Vgs: | 48.2 nC @ 10 V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 3280 pF @ 30 V |
FET Feature: | - |
Power Dissipation (Max): | 87W (Tc) |
Operating Temperature: | 175°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-220 |
Package / Case: | TO-220-3 |
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In Stock | 73078 pieces - More on Order |
---|---|
Quote Limit | No Limit |
Lead-Time | To be Confirmed |
Minimum | 1 |
Warm Tips: Please fill out the form below. We will contact you as soon as possible.
Qty. | Unit Price | Ext. Price |
---|---|---|
1 | $1.98000 | $1.98 |
50 | $1.59760 | $79.88 |
100 | $1.43780 | $143.78 |
500 | $1.11826 | $559.13 |
1000 | $0.92655 | $926.55 |
2500 | $0.89460 | $2236.5 |
Due to the impact of the COVID-19,the above prices have not been updated, please resend the inquiry to us, thank you for your understanding
Please feel free to contact us for details.