For Reference Only
Part Number | TK39J60W5,S1VQ |
Manufacturer | Toshiba Semiconductor and Storage |
Category | Discrete Semiconductor › Transistors - FETs, MOSFETs - Single |
Description | MOSFET N-CH 600V 38.8A TO3P |
Lifecycle | Active |
RoHS | No RoHS Information |
EDA/CAD Models | TK39J60W5,S1VQ PCB Footprint and Symbol |
Warehouses | USA, Europe, China, Hong Kong SAR |
Estimated Delivery | Oct 26 - Oct 30 2024(Choose Expedited Shipping) |
Warranty | Up to 1 year [Limited-Warranty]* |
Payment | |
Shipping |
Part Number: | TK39J60W5,S1VQ |
Brand: | Toshiba Semiconductor and Storage |
Lifecycle: | Active |
RoHS: | Lead free / RoHS Compliant |
Category: | Discrete Semiconductor |
Subcategory: | Transistors - FETs, MOSFETs - Single |
Manufacturer: | Toshiba Semiconductor and Storage |
Product Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 600 V |
Current - Continuous Drain (Id) @ 25°C: | 38.8A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 65mOhm @ 19.4A, 10V |
Vgs(th) (Max) @ Id: | 3.7V @ 1.9mA |
Gate Charge (Qg) (Max) @ Vgs: | 135 nC @ 10 V |
Vgs (Max): | ±30V |
Input Capacitance (Ciss) (Max) @ Vds: | 4100 pF @ 300 V |
FET Feature: | Super Junction |
Power Dissipation (Max): | 270W (Tc) |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-3P(N) |
Package / Case: | TO-3P-3, SC-65-3 |
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In Stock | 8864 pieces - More on Order |
---|---|
Quote Limit | No Limit |
Lead-Time | To be Confirmed |
Minimum | 1 |
Warm Tips: Please fill out the form below. We will contact you as soon as possible.
Qty. | Unit Price | Ext. Price |
---|---|---|
1 | $11.05000 | $11.05 |
25 | $9.06120 | $226.53 |
100 | $8.17700 | $817.7 |
500 | $6.85100 | $3425.5 |
1000 | $6.18800 | $6188 |
Due to the impact of the COVID-19,the above prices have not been updated, please resend the inquiry to us, thank you for your understanding
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