TK10E60W,S1VX

TK10E60W,S1VX
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Part Number TK10E60W,S1VX
Manufacturer Toshiba Semiconductor and Storage
Category Discrete SemiconductorTransistors - FETs, MOSFETs - Single
Description MOSFET N-CH 600V 9.7A TO220
Lifecycle Active
RoHS No RoHS Information
EDA/CAD Models TK10E60W,S1VX PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Nov 26 - Nov 30 2024(Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*
Payment Wire Transfer, UnionPay, PayPal, Credit Card, Visa, MasterCard, AmericanExpress, Discover, WesternUnion, MoneyGram
Shipping DHL, UPS, FedEx, TNT, EMS, & More Express Delivery

TK10E60W,S1VX Specifications

Part Number:TK10E60W,S1VX
Brand:Toshiba Semiconductor and Storage
Lifecycle:Active
RoHS:Lead free / RoHS Compliant
Category:Discrete Semiconductor
Subcategory:Transistors - FETs, MOSFETs - Single
Manufacturer:Toshiba Semiconductor and Storage
Product Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:9.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:380mOhm @ 4.9A, 10V
Vgs(th) (Max) @ Id:3.7V @ 500µA
Gate Charge (Qg) (Max) @ Vgs:20 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:700 pF @ 300 V
FET Feature:Super Junction
Power Dissipation (Max):100W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220
Package / Case:TO-220-3

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Quick Inquiry

In Stock 27589 pieces - More on Order
Quote Limit No Limit
Lead-Time To be Confirmed
Minimum 1

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Pricing (USD)

Qty. Unit Price Ext. Price
1$2.80000$2.8
50$2.25000$112.5
100$2.05000$205
500$1.66000$830
1000$1.40000$1400

Due to the impact of the COVID-19,the above prices have not been updated, please resend the inquiry to us, thank you for your understanding

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