For Reference Only
| Part Number | SSM6N35FE,LM |
| Manufacturer | Toshiba Semiconductor and Storage |
| Category | Discrete Semiconductor › Transistors - FETs, MOSFETs - Arrays |
| Description | MOSFET 2N-CH 20V 0.18A ES6 |
| Lifecycle | Active |
| RoHS | No RoHS Information |
| EDA/CAD Models | SSM6N35FE,LM PCB Footprint and Symbol |
| Warehouses | USA, Europe, China, Hong Kong SAR |
| Estimated Delivery | Nov 25 - Nov 29 2024(Choose Expedited Shipping) |
| Warranty | Up to 1 year [Limited-Warranty]* |
| Payment | 
|
| Shipping |  |
| Part Number: | SSM6N35FE,LM |
| Brand: | Toshiba Semiconductor and Storage |
| Lifecycle: | Active |
| RoHS: | Lead free / RoHS Compliant |
| Category: | Discrete Semiconductor |
| Subcategory: | Transistors - FETs, MOSFETs - Arrays |
| Manufacturer: | Toshiba Semiconductor and Storage |
| Product Status: | Active |
| FET Type: | 2 N-Channel (Dual) |
| FET Feature: | Logic Level Gate |
| Drain to Source Voltage (Vdss): | 20V |
| Current - Continuous Drain (Id) @ 25°C: | 180mA |
| Rds On (Max) @ Id, Vgs: | 3Ohm @ 50mA, 4V |
| Vgs(th) (Max) @ Id: | 1V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs: | - |
| Input Capacitance (Ciss) (Max) @ Vds: | 9.5pF @ 3V |
| Power - Max: | 150mW |
| Operating Temperature: | 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Package / Case: | SOT-563, SOT-666 |
| Supplier Device Package: | ES6 |
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| In Stock | 48884 pieces - More on Order |
|---|---|
| Quote Limit | No Limit |
| Lead-Time | To be Confirmed |
| Minimum | 1 |
Warm Tips: Please fill out the form below. We will contact you as soon as possible.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 4000 | $0.07000 | $280 |
| 8000 | $0.06300 | $504 |
| 12000 | $0.05600 | $672 |
| 28000 | $0.05250 | $1470 |
| 100000 | $0.04900 | $4900 |
Due to the impact of the COVID-19,the above prices have not been updated, please resend the inquiry to us, thank you for your understanding
Please feel free to contact us for details.
