For Reference Only
| Part Number | SSM6K211FE,LF |
| Manufacturer | Toshiba Semiconductor and Storage |
| Category | Discrete Semiconductor › Transistors - FETs, MOSFETs - Single |
| Description | MOSFET N-CH 20V 3.2A ES6 |
| Lifecycle | Active |
| RoHS | No RoHS Information |
| EDA/CAD Models | SSM6K211FE,LF PCB Footprint and Symbol |
| Warehouses | USA, Europe, China, Hong Kong SAR |
| Estimated Delivery | Sep 21 - Sep 25 2024(Choose Expedited Shipping) |
| Warranty | Up to 1 year [Limited-Warranty]* |
| Payment | 
|
| Shipping |  |
| Part Number: | SSM6K211FE,LF |
| Brand: | Toshiba Semiconductor and Storage |
| Lifecycle: | Active |
| RoHS: | Lead free / RoHS Compliant |
| Category: | Discrete Semiconductor |
| Subcategory: | Transistors - FETs, MOSFETs - Single |
| Manufacturer: | Toshiba Semiconductor and Storage |
| Product Status: | Active |
| FET Type: | N-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 20 V |
| Current - Continuous Drain (Id) @ 25°C: | 3.2A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On): | 1.5V, 4.5V |
| Rds On (Max) @ Id, Vgs: | 47mOhm @ 2A, 4.5V |
| Vgs(th) (Max) @ Id: | 1V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs: | 10.8 nC @ 4.5 V |
| Vgs (Max): | ±10V |
| Input Capacitance (Ciss) (Max) @ Vds: | 510 pF @ 10 V |
| FET Feature: | - |
| Power Dissipation (Max): | 500mW (Ta) |
| Operating Temperature: | 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Supplier Device Package: | ES6 |
| Package / Case: | SOT-563, SOT-666 |
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| In Stock | 41867 pieces - More on Order |
|---|---|
| Quote Limit | No Limit |
| Lead-Time | To be Confirmed |
| Minimum | 1 |
Warm Tips: Please fill out the form below. We will contact you as soon as possible.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 4000 | $0.14685 | $587.4 |
| 8000 | $0.13795 | $1103.6 |
| 12000 | $0.12905 | $1548.6 |
| 28000 | $0.12460 | $3488.8 |
Due to the impact of the COVID-19,the above prices have not been updated, please resend the inquiry to us, thank you for your understanding
Please feel free to contact us for details.
