For Reference Only
| Part Number | SSM6H19NU,LF |
| Manufacturer | Toshiba Semiconductor and Storage |
| Category | Discrete Semiconductor › Transistors - FETs, MOSFETs - Single |
| Description | MOSFET N-CH 40V 2A 6UDFN |
| Lifecycle | Active |
| RoHS | No RoHS Information |
| EDA/CAD Models | SSM6H19NU,LF PCB Footprint and Symbol |
| Warehouses | USA, Europe, China, Hong Kong SAR |
| Estimated Delivery | Dec 07 - Dec 11 2025(Choose Expedited Shipping) |
| Warranty | Up to 1 year [Limited-Warranty]* |
| Payment | 
|
| Shipping |  |
| Part Number: | SSM6H19NU,LF |
| Brand: | Toshiba Semiconductor and Storage |
| Lifecycle: | Active |
| RoHS: | Lead free / RoHS Compliant |
| Category: | Discrete Semiconductor |
| Subcategory: | Transistors - FETs, MOSFETs - Single |
| Manufacturer: | Toshiba Semiconductor and Storage |
| Product Status: | Active |
| FET Type: | N-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 40 V |
| Current - Continuous Drain (Id) @ 25°C: | 2A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On): | 1.8V, 8V |
| Rds On (Max) @ Id, Vgs: | 185mOhm @ 1A, 8V |
| Vgs(th) (Max) @ Id: | 1.2V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs: | 2.2 nC @ 4.2 V |
| Vgs (Max): | ±12V |
| Input Capacitance (Ciss) (Max) @ Vds: | 130 pF @ 10 V |
| FET Feature: | - |
| Power Dissipation (Max): | 1W (Ta) |
| Operating Temperature: | 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Supplier Device Package: | 6-UDFN (2x2) |
| Package / Case: | 6-UDFN Exposed Pad |
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| In Stock | 78351 pieces - More on Order |
|---|---|
| Quote Limit | No Limit |
| Lead-Time | To be Confirmed |
| Minimum | 1 |
Warm Tips: Please fill out the form below. We will contact you as soon as possible.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 3000 | $0.10065 | $301.95 |
| 6000 | $0.09455 | $567.3 |
| 15000 | $0.08845 | $1326.75 |
| 30000 | $0.08540 | $2562 |
Due to the impact of the COVID-19,the above prices have not been updated, please resend the inquiry to us, thank you for your understanding
Please feel free to contact us for details.
