SSM3J66MFV,L3F

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Part Number	SSM3J66MFV,L3F
Manufacturer	Toshiba Semiconductor and Storage
Category	Discrete Semiconductor › Transistors - FETs, MOSFETs - Single
Description	MOSFET P-CH 20V 800MA VESM
Lifecycle	Active
RoHS	No RoHS Information
EDA/CAD Models	SSM3J66MFV,L3F PCB Footprint and Symbol
Warehouses	USA, Europe, China, Hong Kong SAR
Estimated Delivery	Dec 29 - Jan 02 2024(Choose Expedited Shipping)
Warranty	Up to 1 year [Limited-Warranty]*
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SSM3J66MFV,L3F Specifications

Part Number:	SSM3J66MFV,L3F
Brand:	Toshiba Semiconductor and Storage
Lifecycle:	Active
RoHS:	Lead free / RoHS Compliant
Category:	Discrete Semiconductor
Subcategory:	Transistors - FETs, MOSFETs - Single
Manufacturer:	Toshiba Semiconductor and Storage
Product Status:	Active
FET Type:	P-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	20 V
Current - Continuous Drain (Id) @ 25°C:	800mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):	1.2V, 4.5V
Rds On (Max) @ Id, Vgs:	390mOhm @ 800mA, 4.5V
Vgs(th) (Max) @ Id:	1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:	1.6 nC @ 4.5 V
Vgs (Max):	+6V, -8V
Input Capacitance (Ciss) (Max) @ Vds:	100 pF @ 10 V
FET Feature:	-
Power Dissipation (Max):	150mW (Ta)
Operating Temperature:	150°C
Mounting Type:	Surface Mount
Supplier Device Package:	VESM
Package / Case:	SOT-723

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