For Reference Only
| Part Number | SSM3J353F,LF |
| Manufacturer | Toshiba Semiconductor and Storage |
| Category | Discrete Semiconductor › Transistors - FETs, MOSFETs - Single |
| Description | MOSFET P-CH 30V 2A S-MINI |
| Lifecycle | Active |
| RoHS | No RoHS Information |
| EDA/CAD Models | SSM3J353F,LF PCB Footprint and Symbol |
| Warehouses | USA, Europe, China, Hong Kong SAR |
| Estimated Delivery | Dec 22 - Dec 26 2024(Choose Expedited Shipping) |
| Warranty | Up to 1 year [Limited-Warranty]* |
| Payment | 
|
| Shipping |  |
| Part Number: | SSM3J353F,LF |
| Brand: | Toshiba Semiconductor and Storage |
| Lifecycle: | Active |
| RoHS: | Lead free / RoHS Compliant |
| Category: | Discrete Semiconductor |
| Subcategory: | Transistors - FETs, MOSFETs - Single |
| Manufacturer: | Toshiba Semiconductor and Storage |
| Product Status: | Active |
| FET Type: | P-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 30 V |
| Current - Continuous Drain (Id) @ 25°C: | 2A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On): | 4V, 10V |
| Rds On (Max) @ Id, Vgs: | 150mOhm @ 2A, 10V |
| Vgs(th) (Max) @ Id: | 2.2V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs: | 3.4 nC @ 4.5 V |
| Vgs (Max): | +20V, -25V |
| Input Capacitance (Ciss) (Max) @ Vds: | 159 pF @ 15 V |
| FET Feature: | - |
| Power Dissipation (Max): | 600mW (Ta) |
| Operating Temperature: | 150°C |
| Mounting Type: | Surface Mount |
| Supplier Device Package: | S-Mini |
| Package / Case: | TO-236-3, SC-59, SOT-23-3 |
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| In Stock | 70443 pieces - More on Order |
|---|---|
| Quote Limit | No Limit |
| Lead-Time | To be Confirmed |
| Minimum | 1 |
Warm Tips: Please fill out the form below. We will contact you as soon as possible.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 3000 | $0.08600 | $258 |
| 6000 | $0.07740 | $464.4 |
| 15000 | $0.06880 | $1032 |
| 30000 | $0.06450 | $1935 |
| 75000 | $0.06020 | $4515 |
Due to the impact of the COVID-19,the above prices have not been updated, please resend the inquiry to us, thank you for your understanding
Please feel free to contact us for details.
