SSM3J168F,LXHF

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Part Number	SSM3J168F,LXHF
Manufacturer	Toshiba Semiconductor and Storage
Category	Discrete Semiconductor › Transistors - FETs, MOSFETs - Single
Description	SMOS LOW RON VDS:-60V VGSS:+10/-
Lifecycle	Active
RoHS	No RoHS Information
EDA/CAD Models	SSM3J168F,LXHF PCB Footprint and Symbol
Warehouses	USA, Europe, China, Hong Kong SAR
Estimated Delivery	Jan 02 - Jan 06 2025(Choose Expedited Shipping)
Warranty	Up to 1 year [Limited-Warranty]*
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SSM3J168F,LXHF Specifications

Part Number:	SSM3J168F,LXHF
Brand:	Toshiba Semiconductor and Storage
Lifecycle:	Active
RoHS:	Lead free / RoHS Compliant
Category:	Discrete Semiconductor
Subcategory:	Transistors - FETs, MOSFETs - Single
Manufacturer:	Toshiba Semiconductor and Storage
Product Status:	Active
FET Type:	P-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	60 V
Current - Continuous Drain (Id) @ 25°C:	400mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):	4V, 10V
Rds On (Max) @ Id, Vgs:	1.55Ohm @ 200mA, 10V
Vgs(th) (Max) @ Id:	2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:	3 nC @ 10 V
Vgs (Max):	+10V, -20V
Input Capacitance (Ciss) (Max) @ Vds:	82 pF @ 10 V
FET Feature:	-
Power Dissipation (Max):	600mW (Ta)
Operating Temperature:	150°C
Mounting Type:	Surface Mount
Supplier Device Package:	S-Mini
Package / Case:	TO-236-3, SC-59, SOT-23-3