For Reference Only
| Part Number | RN2709JE(TE85L,F) |
| Manufacturer | Toshiba Semiconductor and Storage |
| Category | Discrete Semiconductor › Transistors - Bipolar (BJT) - Arrays, Pre-Biased |
| Description | TRANS 2PNP PREBIAS 0.1W ESV |
| Lifecycle | Active |
| RoHS | No RoHS Information |
| EDA/CAD Models | RN2709JE(TE85L,F) PCB Footprint and Symbol |
| Warehouses | USA, Europe, China, Hong Kong SAR |
| Estimated Delivery | Nov 14 - Nov 18 2024(Choose Expedited Shipping) |
| Warranty | Up to 1 year [Limited-Warranty]* |
| Payment | 
|
| Shipping |  |
| Part Number: | RN2709JE(TE85L,F) |
| Brand: | Toshiba Semiconductor and Storage |
| Lifecycle: | Active |
| RoHS: | Lead free / RoHS Compliant |
| Category: | Discrete Semiconductor |
| Subcategory: | Transistors - Bipolar (BJT) - Arrays, Pre-Biased |
| Manufacturer: | Toshiba Semiconductor and Storage |
| Product Status: | Active |
| Transistor Type: | 2 PNP - Pre-Biased (Dual) (Emitter Coupled) |
| Current - Collector (Ic) (Max): | 100mA |
| Voltage - Collector Emitter Breakdown (Max): | 50V |
| Resistor - Base (R1): | 47kOhms |
| Resistor - Emitter Base (R2): | 22kOhms |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 70 @ 10mA, 5V |
| Vce Saturation (Max) @ Ib, Ic: | 300mV @ 250µA, 5mA |
| Current - Collector Cutoff (Max): | 100nA (ICBO) |
| Frequency - Transition: | 200MHz |
| Power - Max: | 100mW |
| Mounting Type: | Surface Mount |
| Package / Case: | SOT-553 |
| Supplier Device Package: | ESV |
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| In Stock | 44113 pieces - More on Order |
|---|---|
| Quote Limit | No Limit |
| Lead-Time | To be Confirmed |
| Minimum | 1 |
Warm Tips: Please fill out the form below. We will contact you as soon as possible.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 4000 | $0.08820 | $352.8 |
| 8000 | $0.07938 | $635.04 |
| 12000 | $0.07056 | $846.72 |
| 28000 | $0.06615 | $1852.2 |
| 100000 | $0.05880 | $5880 |
Due to the impact of the COVID-19,the above prices have not been updated, please resend the inquiry to us, thank you for your understanding
Please feel free to contact us for details.
