RN2309,LF

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Part Number	RN2309,LF
Manufacturer	Toshiba Semiconductor and Storage
Category	Discrete Semiconductor › Transistors - Bipolar (BJT) - Single, Pre-Biased
Description	TRANS PREBIAS PNP 50V 0.1A USM
Lifecycle	Active
RoHS	No RoHS Information
EDA/CAD Models	RN2309,LF PCB Footprint and Symbol
Warehouses	USA, Europe, China, Hong Kong SAR
Estimated Delivery	Nov 24 - Nov 28 2024(Choose Expedited Shipping)
Warranty	Up to 1 year [Limited-Warranty]*
Payment
Shipping

RN2309,LF Specifications

Part Number:	RN2309,LF
Brand:	Toshiba Semiconductor and Storage
Lifecycle:	Active
RoHS:	Lead free / RoHS Compliant
Category:	Discrete Semiconductor
Subcategory:	Transistors - Bipolar (BJT) - Single, Pre-Biased
Manufacturer:	Toshiba Semiconductor and Storage
Product Status:	Active
Transistor Type:	PNP - Pre-Biased
Current - Collector (Ic) (Max):	100 mA
Voltage - Collector Emitter Breakdown (Max):	50 V
Resistor - Base (R1):	47 kOhms
Resistor - Emitter Base (R2):	22 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:	70 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic:	300mV @ 250µA, 5mA
Current - Collector Cutoff (Max):	500nA
Frequency - Transition:	200 MHz
Power - Max:	100 mW
Mounting Type:	Surface Mount
Package / Case:	SC-70, SOT-323
Supplier Device Package:	SC-70

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