RN1964TE85LF

RN1964TE85LF
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Part Number RN1964TE85LF
Manufacturer Toshiba Semiconductor and Storage
Category Discrete SemiconductorTransistors - Bipolar (BJT) - Arrays, Pre-Biased
Description TRANS 2NPN PREBIAS 0.2W US6
Lifecycle Active
RoHS No RoHS Information
EDA/CAD Models RN1964TE85LF PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Dec 23 - Dec 27 2024(Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*
Payment Wire Transfer, UnionPay, PayPal, Credit Card, Visa, MasterCard, AmericanExpress, Discover, WesternUnion, MoneyGram
Shipping DHL, UPS, FedEx, TNT, EMS, & More Express Delivery

RN1964TE85LF Specifications

Part Number:RN1964TE85LF
Brand:Toshiba Semiconductor and Storage
Lifecycle:Active
RoHS:Lead free / RoHS Compliant
Category:Discrete Semiconductor
Subcategory:Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Manufacturer:Toshiba Semiconductor and Storage
Product Status:Active
Transistor Type:2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max):100mA
Voltage - Collector Emitter Breakdown (Max):50V
Resistor - Base (R1):47kOhms
Resistor - Emitter Base (R2):47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic:300mV @ 250µA, 5mA
Current - Collector Cutoff (Max):100nA (ICBO)
Frequency - Transition:250MHz
Power - Max:200mW
Mounting Type:Surface Mount
Package / Case:6-TSSOP, SC-88, SOT-363
Supplier Device Package:US6

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Quick Inquiry

In Stock 87937 pieces - More on Order
Quote Limit No Limit
Lead-Time To be Confirmed
Minimum 1

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Pricing (USD)

Qty. Unit Price Ext. Price
3000$0.06300$189
6000$0.05670$340.2
15000$0.05040$756
30000$0.04725$1417.5
75000$0.04200$3150

Due to the impact of the COVID-19,the above prices have not been updated, please resend the inquiry to us, thank you for your understanding

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