For Reference Only
Part Number | RN1962FE(TE85L,F) |
Manufacturer | Toshiba Semiconductor and Storage |
Category | Discrete Semiconductor › Transistors - Bipolar (BJT) - Arrays, Pre-Biased |
Description | TRANS 2NPN PREBIAS 0.1W ES6 |
Lifecycle | Active |
RoHS | No RoHS Information |
EDA/CAD Models | RN1962FE(TE85L,F) PCB Footprint and Symbol |
Warehouses | USA, Europe, China, Hong Kong SAR |
Estimated Delivery | Nov 23 - Nov 27 2024(Choose Expedited Shipping) |
Warranty | Up to 1 year [Limited-Warranty]* |
Payment | |
Shipping |
Part Number: | RN1962FE(TE85L,F) |
Brand: | Toshiba Semiconductor and Storage |
Lifecycle: | Active |
RoHS: | Lead free / RoHS Compliant |
Category: | Discrete Semiconductor |
Subcategory: | Transistors - Bipolar (BJT) - Arrays, Pre-Biased |
Manufacturer: | Toshiba Semiconductor and Storage |
Product Status: | Obsolete |
Transistor Type: | 2 NPN - Pre-Biased (Dual) |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 10kOhms |
Resistor - Emitter Base (R2): | 10kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 50 @ 10mA, 5V |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 250µA, 5mA |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
Frequency - Transition: | 250MHz |
Power - Max: | 100mW |
Mounting Type: | Surface Mount |
Package / Case: | SOT-563, SOT-666 |
Supplier Device Package: | ES6 |
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In Stock | 44168 pieces - More on Order |
---|---|
Quote Limit | No Limit |
Lead-Time | To be Confirmed |
Minimum | 1 |
Warm Tips: Please fill out the form below. We will contact you as soon as possible.
Qty. | Unit Price | Ext. Price |
---|---|---|
1 | $0.15000 | $0.15 |
Due to the impact of the COVID-19,the above prices have not been updated, please resend the inquiry to us, thank you for your understanding
Please feel free to contact us for details.