RN1907,LF

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Part Number	RN1907,LF
Manufacturer	Toshiba Semiconductor and Storage
Category	Discrete Semiconductor › Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Description	TRANS 2NPN PREBIAS 0.2W US6
Lifecycle	Active
RoHS	No RoHS Information
EDA/CAD Models	RN1907,LF PCB Footprint and Symbol
Warehouses	USA, Europe, China, Hong Kong SAR
Estimated Delivery	Nov 25 - Nov 29 2024(Choose Expedited Shipping)
Warranty	Up to 1 year [Limited-Warranty]*
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RN1907,LF Specifications

Part Number:	RN1907,LF
Brand:	Toshiba Semiconductor and Storage
Lifecycle:	Active
RoHS:	Lead free / RoHS Compliant
Category:	Discrete Semiconductor
Subcategory:	Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Manufacturer:	Toshiba Semiconductor and Storage
Product Status:	Obsolete
Transistor Type:	2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max):	100mA
Voltage - Collector Emitter Breakdown (Max):	50V
Resistor - Base (R1):	10kOhms
Resistor - Emitter Base (R2):	47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:	80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic:	300mV @ 250µA, 5mA
Current - Collector Cutoff (Max):	500nA
Frequency - Transition:	250MHz
Power - Max:	200mW
Mounting Type:	Surface Mount
Package / Case:	6-TSSOP, SC-88, SOT-363
Supplier Device Package:	US6

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