RN1312(TE85L,F)

RN1312(TE85L,F)
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Part Number RN1312(TE85L,F)
Manufacturer Toshiba Semiconductor and Storage
Category Discrete SemiconductorTransistors - Bipolar (BJT) - Single, Pre-Biased
Description TRANS PREBIAS NPN 50V 0.1A USM
Lifecycle Active
RoHS No RoHS Information
EDA/CAD Models RN1312(TE85L,F) PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Nov 26 - Nov 30 2024(Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*
Payment Wire Transfer, UnionPay, PayPal, Credit Card, Visa, MasterCard, AmericanExpress, Discover, WesternUnion, MoneyGram
Shipping DHL, UPS, FedEx, TNT, EMS, & More Express Delivery

RN1312(TE85L,F) Specifications

Part Number:RN1312(TE85L,F)
Brand:Toshiba Semiconductor and Storage
Lifecycle:Active
RoHS:Lead free / RoHS Compliant
Category:Discrete Semiconductor
Subcategory:Transistors - Bipolar (BJT) - Single, Pre-Biased
Manufacturer:Toshiba Semiconductor and Storage
Product Status:Active
Transistor Type:NPN - Pre-Biased
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):50 V
Resistor - Base (R1):22 kOhms
Resistor - Emitter Base (R2):-
DC Current Gain (hFE) (Min) @ Ic, Vce:120 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic:300mV @ 250µA, 5mA
Current - Collector Cutoff (Max):100nA (ICBO)
Frequency - Transition:250 MHz
Power - Max:150 mW
Mounting Type:Surface Mount
Package / Case:SC-70, SOT-323
Supplier Device Package:SC-70

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Quick Inquiry

In Stock 92411 pieces - More on Order
Quote Limit No Limit
Lead-Time To be Confirmed
Minimum 1

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Pricing (USD)

Qty. Unit Price Ext. Price
3000$0.04830$144.9
6000$0.04200$252
15000$0.03570$535.5
30000$0.03360$1008
75000$0.03150$2362.5
150000$0.02800$4200

Due to the impact of the COVID-19,the above prices have not been updated, please resend the inquiry to us, thank you for your understanding

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