RN1114(T5L,F,T)

RN1114(T5L,F,T)
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Part Number RN1114(T5L,F,T)
Manufacturer Toshiba Semiconductor and Storage
Category Discrete SemiconductorTransistors - Bipolar (BJT) - Single, Pre-Biased
Description TRANS PREBIAS NPN 50V 0.1A SSM
Lifecycle Active
RoHS No RoHS Information
EDA/CAD Models RN1114(T5L,F,T) PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Nov 22 - Nov 26 2024(Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*
Payment Wire Transfer, UnionPay, PayPal, Credit Card, Visa, MasterCard, AmericanExpress, Discover, WesternUnion, MoneyGram
Shipping DHL, UPS, FedEx, TNT, EMS, & More Express Delivery

RN1114(T5L,F,T) Specifications

Part Number:RN1114(T5L,F,T)
Brand:Toshiba Semiconductor and Storage
Lifecycle:Active
RoHS:Lead free / RoHS Compliant
Category:Discrete Semiconductor
Subcategory:Transistors - Bipolar (BJT) - Single, Pre-Biased
Manufacturer:Toshiba Semiconductor and Storage
Product Status:Active
Transistor Type:NPN - Pre-Biased
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):50 V
Resistor - Base (R1):1 kOhms
Resistor - Emitter Base (R2):10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:50 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic:300mV @ 250µA, 5mA
Current - Collector Cutoff (Max):500nA
Frequency - Transition:250 MHz
Power - Max:100 mW
Mounting Type:Surface Mount
Package / Case:SC-75, SOT-416
Supplier Device Package:SSM

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