For Reference Only
Part Number | MT3S113P(TE12L,F) |
Manufacturer | Toshiba Semiconductor and Storage |
Category | Discrete Semiconductor › Transistors - Bipolar (BJT) - RF |
Description | RF TRANS NPN 5.3V 7.7GHZ PW-MINI |
Lifecycle | Active |
RoHS | No RoHS Information |
EDA/CAD Models | MT3S113P(TE12L,F) PCB Footprint and Symbol |
Warehouses | USA, Europe, China, Hong Kong SAR |
Estimated Delivery | Dec 27 - Dec 31 2024(Choose Expedited Shipping) |
Warranty | Up to 1 year [Limited-Warranty]* |
Payment | |
Shipping |
Part Number: | MT3S113P(TE12L,F) |
Brand: | Toshiba Semiconductor and Storage |
Lifecycle: | Active |
RoHS: | Lead free / RoHS Compliant |
Category: | Discrete Semiconductor |
Subcategory: | Transistors - Bipolar (BJT) - RF |
Manufacturer: | Toshiba Semiconductor and Storage |
Product Status: | Active |
Transistor Type: | NPN |
Voltage - Collector Emitter Breakdown (Max): | 5.3V |
Frequency - Transition: | 7.7GHz |
Noise Figure (dB Typ @ f): | 1.45dB @ 1GHz |
Gain: | 10.5dB |
Power - Max: | 1.6W |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 200 @ 30mA, 5V |
Current - Collector (Ic) (Max): | 100mA |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-243AA |
Supplier Device Package: | PW-MINI |
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In Stock | 74993 pieces - More on Order |
---|---|
Quote Limit | No Limit |
Lead-Time | To be Confirmed |
Minimum | 1 |
Warm Tips: Please fill out the form below. We will contact you as soon as possible.
Qty. | Unit Price | Ext. Price |
---|---|---|
1000 | $0.42300 | $423 |
2000 | $0.39480 | $789.6 |
5000 | $0.37506 | $1875.3 |
10000 | $0.35955 | $3595.5 |
25000 | $0.34968 | $8742 |
Due to the impact of the COVID-19,the above prices have not been updated, please resend the inquiry to us, thank you for your understanding
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