MT3S113(TE85L,F)

MT3S113(TE85L,F)
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Part Number MT3S113(TE85L,F)
Manufacturer Toshiba Semiconductor and Storage
Category Discrete SemiconductorTransistors - Bipolar (BJT) - RF
Description RF TRANS NPN 5.3V 12.5GHZ SMINI
Lifecycle Active
RoHS No RoHS Information
EDA/CAD Models MT3S113(TE85L,F) PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Nov 10 - Nov 14 2024(Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*
Payment Wire Transfer, UnionPay, PayPal, Credit Card, Visa, MasterCard, AmericanExpress, Discover, WesternUnion, MoneyGram
Shipping DHL, UPS, FedEx, TNT, EMS, & More Express Delivery

MT3S113(TE85L,F) Specifications

Part Number:MT3S113(TE85L,F)
Brand:Toshiba Semiconductor and Storage
Lifecycle:Active
RoHS:Lead free / RoHS Compliant
Category:Discrete Semiconductor
Subcategory:Transistors - Bipolar (BJT) - RF
Manufacturer:Toshiba Semiconductor and Storage
Product Status:Active
Transistor Type:NPN
Voltage - Collector Emitter Breakdown (Max):5.3V
Frequency - Transition:12.5GHz
Noise Figure (dB Typ @ f):1.45dB @ 1GHz
Gain:11.8dB
Power - Max:800mW
DC Current Gain (hFE) (Min) @ Ic, Vce:200 @ 30mA, 5V
Current - Collector (Ic) (Max):100mA
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:S-Mini

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In Stock 93491 pieces - More on Order
Quote Limit No Limit
Lead-Time To be Confirmed
Minimum 1

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Pricing (USD)

Qty. Unit Price Ext. Price
3000$0.28000$840
6000$0.26600$1596
15000$0.25500$3825
30000$0.24800$7440

Due to the impact of the COVID-19,the above prices have not been updated, please resend the inquiry to us, thank you for your understanding

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