For Reference Only
Part Number | MT3S111TU,LF |
Manufacturer | Toshiba Semiconductor and Storage |
Category | Discrete Semiconductor › Transistors - Bipolar (BJT) - RF |
Description | RF SIGE NPN BIPOLAR TRANSISTOR N |
Lifecycle | Active |
RoHS | No RoHS Information |
EDA/CAD Models | MT3S111TU,LF PCB Footprint and Symbol |
Warehouses | USA, Europe, China, Hong Kong SAR |
Estimated Delivery | Nov 06 - Nov 10 2024(Choose Expedited Shipping) |
Warranty | Up to 1 year [Limited-Warranty]* |
Payment | |
Shipping |
Part Number: | MT3S111TU,LF |
Brand: | Toshiba Semiconductor and Storage |
Lifecycle: | Active |
RoHS: | Lead free / RoHS Compliant |
Category: | Discrete Semiconductor |
Subcategory: | Transistors - Bipolar (BJT) - RF |
Manufacturer: | Toshiba Semiconductor and Storage |
Product Status: | Active |
Transistor Type: | NPN |
Voltage - Collector Emitter Breakdown (Max): | 6V |
Frequency - Transition: | 10GHz |
Noise Figure (dB Typ @ f): | 0.6dB ~ 0.85dB @ 500MHz ~ 1GHz |
Gain: | 12.5dB |
Power - Max: | 800mW |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 200 @ 30mA, 5V |
Current - Collector (Ic) (Max): | 100mA |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 3-SMD, Flat Lead |
Supplier Device Package: | UFM |
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In Stock | 65839 pieces - More on Order |
---|---|
Quote Limit | No Limit |
Lead-Time | To be Confirmed |
Minimum | 1 |
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Qty. | Unit Price | Ext. Price |
---|---|---|
1 | $0.58000 | $0.58 |
Due to the impact of the COVID-19,the above prices have not been updated, please resend the inquiry to us, thank you for your understanding
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