For Reference Only
| Part Number | MT3S111TU,LF |
| Manufacturer | Toshiba Semiconductor and Storage |
| Category | Discrete Semiconductor › Transistors - Bipolar (BJT) - RF |
| Description | RF SIGE NPN BIPOLAR TRANSISTOR N |
| Lifecycle | Active |
| RoHS | No RoHS Information |
| EDA/CAD Models | MT3S111TU,LF PCB Footprint and Symbol |
| Warehouses | USA, Europe, China, Hong Kong SAR |
| Estimated Delivery | Dec 25 - Dec 29 2024(Choose Expedited Shipping) |
| Warranty | Up to 1 year [Limited-Warranty]* |
| Payment | 
|
| Shipping |  |
| Part Number: | MT3S111TU,LF |
| Brand: | Toshiba Semiconductor and Storage |
| Lifecycle: | Active |
| RoHS: | Lead free / RoHS Compliant |
| Category: | Discrete Semiconductor |
| Subcategory: | Transistors - Bipolar (BJT) - RF |
| Manufacturer: | Toshiba Semiconductor and Storage |
| Product Status: | Active |
| Transistor Type: | NPN |
| Voltage - Collector Emitter Breakdown (Max): | 6V |
| Frequency - Transition: | 10GHz |
| Noise Figure (dB Typ @ f): | 0.6dB ~ 0.85dB @ 500MHz ~ 1GHz |
| Gain: | 12.5dB |
| Power - Max: | 800mW |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 200 @ 30mA, 5V |
| Current - Collector (Ic) (Max): | 100mA |
| Operating Temperature: | 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Package / Case: | 3-SMD, Flat Lead |
| Supplier Device Package: | UFM |
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| In Stock | 65839 pieces - More on Order |
|---|---|
| Quote Limit | No Limit |
| Lead-Time | To be Confirmed |
| Minimum | 1 |
Warm Tips: Please fill out the form below. We will contact you as soon as possible.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1 | $0.58000 | $0.58 |
Due to the impact of the COVID-19,the above prices have not been updated, please resend the inquiry to us, thank you for your understanding
Please feel free to contact us for details.
