MT3S111P(TE12L,F)

MT3S111P(TE12L,F)
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Part Number MT3S111P(TE12L,F)
Manufacturer Toshiba Semiconductor and Storage
Category Discrete SemiconductorTransistors - Bipolar (BJT) - RF
Description RF TRANS NPN 6V 8GHZ PW-MINI
Lifecycle Active
RoHS No RoHS Information
EDA/CAD Models MT3S111P(TE12L,F) PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Nov 25 - Nov 29 2024(Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*
Payment Wire Transfer, UnionPay, PayPal, Credit Card, Visa, MasterCard, AmericanExpress, Discover, WesternUnion, MoneyGram
Shipping DHL, UPS, FedEx, TNT, EMS, & More Express Delivery

MT3S111P(TE12L,F) Specifications

Part Number:MT3S111P(TE12L,F)
Brand:Toshiba Semiconductor and Storage
Lifecycle:Active
RoHS:Lead free / RoHS Compliant
Category:Discrete Semiconductor
Subcategory:Transistors - Bipolar (BJT) - RF
Manufacturer:Toshiba Semiconductor and Storage
Product Status:Active
Transistor Type:NPN
Voltage - Collector Emitter Breakdown (Max):6V
Frequency - Transition:8GHz
Noise Figure (dB Typ @ f):1.25dB @ 1GHz
Gain:10.5dB
Power - Max:1W
DC Current Gain (hFE) (Min) @ Ic, Vce:200 @ 30mA, 5V
Current - Collector (Ic) (Max):100mA
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-243AA
Supplier Device Package:PW-MINI

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Quick Inquiry

In Stock 55129 pieces - More on Order
Quote Limit No Limit
Lead-Time To be Confirmed
Minimum 1

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Pricing (USD)

Qty. Unit Price Ext. Price
1000$0.38250$382.5
2000$0.35700$714
5000$0.33915$1695.75
10000$0.32513$3251.3
25000$0.31620$7905

Due to the impact of the COVID-19,the above prices have not been updated, please resend the inquiry to us, thank you for your understanding

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