HN4B01JE(TE85L,F)

HN4B01JE(TE85L,F)
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Part Number HN4B01JE(TE85L,F)
Manufacturer Toshiba Semiconductor and Storage
Category Discrete SemiconductorTransistors - Bipolar (BJT) - Arrays
Description TRANS NPN/PNP 50V 0.15A ESV PLN
Lifecycle Active
RoHS No RoHS Information
EDA/CAD Models HN4B01JE(TE85L,F) PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Dec 23 - Dec 27 2024(Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*
Payment Wire Transfer, UnionPay, PayPal, Credit Card, Visa, MasterCard, AmericanExpress, Discover, WesternUnion, MoneyGram
Shipping DHL, UPS, FedEx, TNT, EMS, & More Express Delivery

HN4B01JE(TE85L,F) Specifications

Part Number:HN4B01JE(TE85L,F)
Brand:Toshiba Semiconductor and Storage
Lifecycle:Active
RoHS:Lead free / RoHS Compliant
Category:Discrete Semiconductor
Subcategory:Transistors - Bipolar (BJT) - Arrays
Manufacturer:Toshiba Semiconductor and Storage
Product Status:Active
Transistor Type:NPN, PNP (Emitter Coupled)
Current - Collector (Ic) (Max):150mA
Voltage - Collector Emitter Breakdown (Max):50V
Vce Saturation (Max) @ Ib, Ic:250mV @ 10mA, 100mA
Current - Collector Cutoff (Max):100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:120 @ 10MA, 100MA
Power - Max:100mW
Frequency - Transition:80MHz
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:SOT-553
Supplier Device Package:ESV

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Quick Inquiry

In Stock 90435 pieces - More on Order
Quote Limit No Limit
Lead-Time To be Confirmed
Minimum 1

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Pricing (USD)

Qty. Unit Price Ext. Price
4000$0.07140$285.6
8000$0.06426$514.08
12000$0.05712$685.44
28000$0.05355$1499.4
100000$0.04760$4760

Due to the impact of the COVID-19,the above prices have not been updated, please resend the inquiry to us, thank you for your understanding

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