HN3C51F-GR(TE85L,F

HN3C51F-GR(TE85L,F
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Part Number HN3C51F-GR(TE85L,F
Manufacturer Toshiba Semiconductor and Storage
Category Discrete SemiconductorTransistors - Bipolar (BJT) - Arrays
Description TRANS 2NPN 120V 0.1A SM6
Lifecycle Active
RoHS No RoHS Information
EDA/CAD Models HN3C51F-GR(TE85L,F PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Nov 01 - Nov 05 2024(Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*
Payment Wire Transfer, UnionPay, PayPal, Credit Card, Visa, MasterCard, AmericanExpress, Discover, WesternUnion, MoneyGram
Shipping DHL, UPS, FedEx, TNT, EMS, & More Express Delivery

HN3C51F-GR(TE85L,F Specifications

Part Number:HN3C51F-GR(TE85L,F
Brand:Toshiba Semiconductor and Storage
Lifecycle:Active
RoHS:Lead free / RoHS Compliant
Category:Discrete Semiconductor
Subcategory:Transistors - Bipolar (BJT) - Arrays
Manufacturer:Toshiba Semiconductor and Storage
Product Status:Obsolete
Transistor Type:2 NPN (Dual)
Current - Collector (Ic) (Max):100mA
Voltage - Collector Emitter Breakdown (Max):120V
Vce Saturation (Max) @ Ib, Ic:300mV @ 1mA, 10mA
Current - Collector Cutoff (Max):100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:200 @ 2mA, 6V
Power - Max:300mW
Frequency - Transition:100MHz
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:SC-74, SOT-457
Supplier Device Package:SM6

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In Stock 74907 pieces - More on Order
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