HN3C10FUTE85LF

HN3C10FUTE85LF
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Part Number HN3C10FUTE85LF
Manufacturer Toshiba Semiconductor and Storage
Category Discrete SemiconductorTransistors - Bipolar (BJT) - RF
Description RF TRANS 2 NPN 12V 7GHZ US6
Lifecycle Active
RoHS No RoHS Information
EDA/CAD Models HN3C10FUTE85LF PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Nov 22 - Nov 26 2024(Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*
Payment Wire Transfer, UnionPay, PayPal, Credit Card, Visa, MasterCard, AmericanExpress, Discover, WesternUnion, MoneyGram
Shipping DHL, UPS, FedEx, TNT, EMS, & More Express Delivery

HN3C10FUTE85LF Specifications

Part Number:HN3C10FUTE85LF
Brand:Toshiba Semiconductor and Storage
Lifecycle:Active
RoHS:Lead free / RoHS Compliant
Category:Discrete Semiconductor
Subcategory:Transistors - Bipolar (BJT) - RF
Manufacturer:Toshiba Semiconductor and Storage
Product Status:Active
Transistor Type:2 NPN (Dual)
Voltage - Collector Emitter Breakdown (Max):12V
Frequency - Transition:7GHz
Noise Figure (dB Typ @ f):1.1dB @ 1GHz
Gain:11.5dB
Power - Max:200mW
DC Current Gain (hFE) (Min) @ Ic, Vce:80 @ 20mA, 10V
Current - Collector (Ic) (Max):80mA
Operating Temperature:-
Mounting Type:Surface Mount
Package / Case:6-TSSOP, SC-88, SOT-363
Supplier Device Package:US6

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In Stock 73352 pieces - More on Order
Quote Limit No Limit
Lead-Time To be Confirmed
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Pricing (USD)

Qty. Unit Price Ext. Price
1$0.56000$0.56

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