HN1C03F-B(TE85L,F)

HN1C03F-B(TE85L,F)
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Part Number HN1C03F-B(TE85L,F)
Manufacturer Toshiba Semiconductor and Storage
Category Discrete SemiconductorTransistors - Bipolar (BJT) - Arrays
Description TRANS 2NPN 20V 0.3A SM6
Lifecycle Active
RoHS No RoHS Information
EDA/CAD Models HN1C03F-B(TE85L,F) PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Nov 11 - Nov 15 2024(Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*
Payment Wire Transfer, UnionPay, PayPal, Credit Card, Visa, MasterCard, AmericanExpress, Discover, WesternUnion, MoneyGram
Shipping DHL, UPS, FedEx, TNT, EMS, & More Express Delivery

HN1C03F-B(TE85L,F) Specifications

Part Number:HN1C03F-B(TE85L,F)
Brand:Toshiba Semiconductor and Storage
Lifecycle:Active
RoHS:Lead free / RoHS Compliant
Category:Discrete Semiconductor
Subcategory:Transistors - Bipolar (BJT) - Arrays
Manufacturer:Toshiba Semiconductor and Storage
Product Status:Active
Transistor Type:2 NPN (Dual)
Current - Collector (Ic) (Max):300mA
Voltage - Collector Emitter Breakdown (Max):20V
Vce Saturation (Max) @ Ib, Ic:100mV @ 3mA, 30mA
Current - Collector Cutoff (Max):100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:350 @ 4mA, 2V
Power - Max:300mW
Frequency - Transition:30MHz
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:SC-74, SOT-457
Supplier Device Package:SM6

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In Stock 93627 pieces - More on Order
Quote Limit No Limit
Lead-Time To be Confirmed
Minimum 1

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Pricing (USD)

Qty. Unit Price Ext. Price
3000$0.15136$454.08
6000$0.14159$849.54
15000$0.13183$1977.45
30000$0.13020$3906

Due to the impact of the COVID-19,the above prices have not been updated, please resend the inquiry to us, thank you for your understanding

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