For Reference Only
Part Number | HN1B04FE-GR,LF |
Manufacturer | Toshiba Semiconductor and Storage |
Category | Discrete Semiconductor › Transistors - Bipolar (BJT) - Arrays |
Description | TRANS NPN/PNP 50V 0.15A ES6 |
Lifecycle | Active |
RoHS | No RoHS Information |
EDA/CAD Models | HN1B04FE-GR,LF PCB Footprint and Symbol |
Warehouses | USA, Europe, China, Hong Kong SAR |
Estimated Delivery | Dec 24 - Dec 28 2024(Choose Expedited Shipping) |
Warranty | Up to 1 year [Limited-Warranty]* |
Payment | |
Shipping |
Part Number: | HN1B04FE-GR,LF |
Brand: | Toshiba Semiconductor and Storage |
Lifecycle: | Active |
RoHS: | Lead free / RoHS Compliant |
Category: | Discrete Semiconductor |
Subcategory: | Transistors - Bipolar (BJT) - Arrays |
Manufacturer: | Toshiba Semiconductor and Storage |
Product Status: | Active |
Transistor Type: | NPN, PNP |
Current - Collector (Ic) (Max): | 150mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Vce Saturation (Max) @ Ib, Ic: | 250mV @ 10mA, 100mA |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 200 @ 2mA, 6V |
Power - Max: | 100mW |
Frequency - Transition: | 80MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | SOT-563, SOT-666 |
Supplier Device Package: | ES6 |
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In Stock | 53759 pieces - More on Order |
---|---|
Quote Limit | No Limit |
Lead-Time | To be Confirmed |
Minimum | 1 |
Warm Tips: Please fill out the form below. We will contact you as soon as possible.
Qty. | Unit Price | Ext. Price |
---|---|---|
4000 | $0.05313 | $212.52 |
8000 | $0.04620 | $369.6 |
12000 | $0.03927 | $471.24 |
28000 | $0.03696 | $1034.88 |
100000 | $0.03080 | $3080 |
Due to the impact of the COVID-19,the above prices have not been updated, please resend the inquiry to us, thank you for your understanding
Please feel free to contact us for details.