HN1B04F(TE85L,F)

HN1B04F(TE85L,F)
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Part Number HN1B04F(TE85L,F)
Manufacturer Toshiba Semiconductor and Storage
Category Discrete SemiconductorTransistors - Bipolar (BJT) - Arrays
Description TRANS NPN/PNP 30V 0.5A SM6
Lifecycle Active
RoHS No RoHS Information
EDA/CAD Models HN1B04F(TE85L,F) PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Nov 01 - Nov 05 2024(Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*
Payment Wire Transfer, UnionPay, PayPal, Credit Card, Visa, MasterCard, AmericanExpress, Discover, WesternUnion, MoneyGram
Shipping DHL, UPS, FedEx, TNT, EMS, & More Express Delivery

HN1B04F(TE85L,F) Specifications

Part Number:HN1B04F(TE85L,F)
Brand:Toshiba Semiconductor and Storage
Lifecycle:Active
RoHS:Lead free / RoHS Compliant
Category:Discrete Semiconductor
Subcategory:Transistors - Bipolar (BJT) - Arrays
Manufacturer:Toshiba Semiconductor and Storage
Product Status:Obsolete
Transistor Type:NPN, PNP
Current - Collector (Ic) (Max):500mA
Voltage - Collector Emitter Breakdown (Max):30V
Vce Saturation (Max) @ Ib, Ic:250mV @ 10mA, 100mA
Current - Collector Cutoff (Max):100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:70 @ 100mA, 1V
Power - Max:300mW
Frequency - Transition:200MHz
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:SC-74, SOT-457
Supplier Device Package:SM6

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In Stock 56941 pieces - More on Order
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