HN1B01FU-Y,LXHF

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Part Number	HN1B01FU-Y,LXHF
Manufacturer	Toshiba Semiconductor and Storage
Category	Discrete Semiconductor › Transistors - Bipolar (BJT) - Arrays
Description	AUTO AEC-Q PNP + NPN TR VCEO:-50
Lifecycle	Active
RoHS	No RoHS Information
EDA/CAD Models	HN1B01FU-Y,LXHF PCB Footprint and Symbol
Warehouses	USA, Europe, China, Hong Kong SAR
Estimated Delivery	Dec 23 - Dec 27 2024(Choose Expedited Shipping)
Warranty	Up to 1 year [Limited-Warranty]*
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HN1B01FU-Y,LXHF Specifications

Part Number:	HN1B01FU-Y,LXHF
Brand:	Toshiba Semiconductor and Storage
Lifecycle:	Active
RoHS:	Lead free / RoHS Compliant
Category:	Discrete Semiconductor
Subcategory:	Transistors - Bipolar (BJT) - Arrays
Manufacturer:	Toshiba Semiconductor and Storage
Product Status:	Active
Transistor Type:	NPN, PNP
Current - Collector (Ic) (Max):	150mA
Voltage - Collector Emitter Breakdown (Max):	50V
Vce Saturation (Max) @ Ib, Ic:	300mV @ 10mA, 100mA, 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max):	100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	120 @ 2mA, 6V
Power - Max:	200mW
Frequency - Transition:	120MHz, 150MHz
Operating Temperature:	-
Mounting Type:	Surface Mount
Package / Case:	6-TSSOP, SC-88, SOT-363
Supplier Device Package:	US6

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