For Reference Only
| Part Number | GT60N321(Q) |
| Manufacturer | Toshiba Semiconductor and Storage |
| Category | Discrete Semiconductor › Transistors - IGBTs - Single |
| Description | IGBT 1000V 60A 170W TO3P LH |
| Lifecycle | Active |
| RoHS | No RoHS Information |
| EDA/CAD Models | GT60N321(Q) PCB Footprint and Symbol |
| Warehouses | USA, Europe, China, Hong Kong SAR |
| Estimated Delivery | Dec 23 - Dec 27 2024(Choose Expedited Shipping) |
| Warranty | Up to 1 year [Limited-Warranty]* |
| Payment | 
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| Shipping |  |
| Part Number: | GT60N321(Q) |
| Brand: | Toshiba Semiconductor and Storage |
| Lifecycle: | Active |
| RoHS: | Lead free / RoHS Compliant |
| Category: | Discrete Semiconductor |
| Subcategory: | Transistors - IGBTs - Single |
| Manufacturer: | Toshiba Semiconductor and Storage |
| Product Status: | Obsolete |
| IGBT Type: | - |
| Voltage - Collector Emitter Breakdown (Max): | 1000 V |
| Current - Collector (Ic) (Max): | 60 A |
| Current - Collector Pulsed (Icm): | 120 A |
| Vce(on) (Max) @ Vge, Ic: | 2.8V @ 15V, 60A |
| Power - Max: | 170 W |
| Switching Energy: | - |
| Input Type: | Standard |
| Gate Charge: | - |
| Td (on/off) @ 25°C: | 330ns/700ns |
| Test Condition: | - |
| Reverse Recovery Time (trr): | 2.5 µs |
| Operating Temperature: | 150°C (TJ) |
| Mounting Type: | Through Hole |
| Package / Case: | TO-3PL |
| Supplier Device Package: | TO-3P(LH) |
| In Stock | 70777 pieces - More on Order |
|---|---|
| Quote Limit | No Limit |
| Lead-Time | To be Confirmed |
| Minimum | 1 |
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| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1 | $0.00000 | $0 |
Due to the impact of the COVID-19,the above prices have not been updated, please resend the inquiry to us, thank you for your understanding
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