GT50J121(Q)

GT50J121(Q)
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Part Number GT50J121(Q)
Manufacturer Toshiba Semiconductor and Storage
Category Discrete SemiconductorTransistors - IGBTs - Single
Description IGBT 600V 50A 240W TO3P LH
Lifecycle Active
RoHS No RoHS Information
EDA/CAD Models GT50J121(Q) PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Nov 14 - Nov 18 2024(Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*
Payment Wire Transfer, UnionPay, PayPal, Credit Card, Visa, MasterCard, AmericanExpress, Discover, WesternUnion, MoneyGram
Shipping DHL, UPS, FedEx, TNT, EMS, & More Express Delivery

GT50J121(Q) Specifications

Part Number:GT50J121(Q)
Brand:Toshiba Semiconductor and Storage
Lifecycle:Active
RoHS:Lead free / RoHS Compliant
Category:Discrete Semiconductor
Subcategory:Transistors - IGBTs - Single
Manufacturer:Toshiba Semiconductor and Storage
Product Status:Obsolete
IGBT Type:-
Voltage - Collector Emitter Breakdown (Max):600 V
Current - Collector (Ic) (Max):50 A
Current - Collector Pulsed (Icm):100 A
Vce(on) (Max) @ Vge, Ic:2.45V @ 15V, 50A
Power - Max:240 W
Switching Energy:1.3mJ (on), 1.34mJ (off)
Input Type:Standard
Gate Charge:-
Td (on/off) @ 25°C:90ns/300ns
Test Condition:300V, 50A, 13Ohm, 15V
Reverse Recovery Time (trr):-
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-3PL
Supplier Device Package:TO-3P(LH)

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