GT30N135SRA,S1E

GT30N135SRA,S1E
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Part Number GT30N135SRA,S1E
Manufacturer Toshiba Semiconductor and Storage
Category Discrete SemiconductorTransistors - IGBTs - Single
Description D-IGBT TO-247 VCES=1350V IC=30A
Lifecycle Active
RoHS No RoHS Information
EDA/CAD Models GT30N135SRA,S1E PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Dec 25 - Dec 29 2024(Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*
Payment Wire Transfer, UnionPay, PayPal, Credit Card, Visa, MasterCard, AmericanExpress, Discover, WesternUnion, MoneyGram
Shipping DHL, UPS, FedEx, TNT, EMS, & More Express Delivery

GT30N135SRA,S1E Specifications

Part Number:GT30N135SRA,S1E
Brand:Toshiba Semiconductor and Storage
Lifecycle:Active
RoHS:Lead free / RoHS Compliant
Category:Discrete Semiconductor
Subcategory:Transistors - IGBTs - Single
Manufacturer:Toshiba Semiconductor and Storage
Product Status:Active
IGBT Type:-
Voltage - Collector Emitter Breakdown (Max):1350 V
Current - Collector (Ic) (Max):60 A
Current - Collector Pulsed (Icm):120 A
Vce(on) (Max) @ Vge, Ic:2.6V @ 15V, 60A
Power - Max:348 W
Switching Energy:-, 1.3mJ (off)
Input Type:Standard
Gate Charge:270 nC
Td (on/off) @ 25°C:-
Test Condition:300V, 60A, 39Ohm, 15V
Reverse Recovery Time (trr):-
Operating Temperature:175°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-247-3
Supplier Device Package:TO-247

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In Stock 27998 pieces - More on Order
Quote Limit No Limit
Lead-Time To be Confirmed
Minimum 1

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Pricing (USD)

Qty. Unit Price Ext. Price
1$3.88000$3.88

Due to the impact of the COVID-19,the above prices have not been updated, please resend the inquiry to us, thank you for your understanding

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